Gallium Nitride, or GaN, is a mechanically and heat-resistant semiconductor compound. In its pure form, it has a band-gap of 3.4 eV. Purity: 99.99%

Gallium Nitride GaN:
Gan Gallium Nitride This is a semiconductor compound with a band gap of 3.4 eV and high thermal conductivity. In its pure form, it has a band-gap of 3.4eV.

Gallium Nitride:

CAS Number	CAS 2561797-4
Purity	>=99.99%
CAS number	25617-97-4
Appearance	Yellow powder
X ray Diffraction	Conforms to Structure
Trance Metal Analysis	200 ppm

This material is suitable for satellite solar cells arrays due to its low sensitivity (with another III-nitride group). This equipment can also be used for military or space applications because it is resistant to radiation.

Since the Gallium nitride transistor As they are able to operate at higher temperatures, and with a higher voltage than the Arsenide (GaAs), they make an ideal power amplifier at microwave frequencies. GAN can also be used to provide a feature that is hoped for in THz devices. GaN has been revealed to be a candidate for 5G cell base stations due to its high voltage breakdown and power density.

GaN materials research and applications are at the forefront of global semiconductor research. It is a new material for developing semiconductor devices, optical electronics and other semiconductor materials, such as SiC or diamonds. These are also known as first-generation GE, Si-A third-generation semiconductor after semiconductor material, GaAs second-generation, InP composite semiconductor material. It has a large direct bandgap and a strong atomic connection, as well as high thermal conductivity (almost no sour corrosive corrosion), high chemical stability, etc. Applications in high-temperature, high-power devices, microwaves with high frequency, have broad prospects.

Send an inquiry for the latest news gallium nitride price You can also contact us if you have any questions. Gallium Nitride powder Bulk discounts are available.

Gallium Nitride Product Performance
The applications of GaN are wide-ranging. It has strong atomic bonds and a large direct bandgap. It also has high thermal conductivity and chemical stability (almost zero acid corrosion).

Technical Parameters of Gallium Nitride GaN:

Product Name	MF	Purity	Particle Size	Melting Point	Density	Color
gallium nitride	GaN	99.99%	-60 mesh	1700	6.1g/mL,25/4	light yellow

Chemical Composition and Properties of Gallium Nitride GaN:

GaN	Curiosity	You can also find us on Twitter @Ni	Zn	Al	Na		The following are some of the ways to get in touch with us	Ca
99.99%	0.0005%	0.0003%	0.0005%	0.001%	0.0005%	0.0003%	0.0005%	0.005%

How do you pronounce Gallium Nitride GaN Powder produced?
Group III-V gallium nitride Gan semiconductor The compound has a high resistance to corrosion. It is because of the bond formed between Ga and Nitrogen that the compound is corrosion resistant. Ballium Nitride is a direct bandgap (bandgap =3.4 with fibrous mineral structure) semiconductor and is used for the production of corrosive light emitting devices. Gallium Nitride is made by reacting Ga2O3 and NH3 together at high temperatures of around 1000 deg C.
Ga 2 O 3 + 2 NH 3 - 2 GaN + 3H 2 O
A compound organometallic containing Ga with a nitrogen atom may also be formed by the chemical phase. GaN is unaffected by acidic and alkaline environments.

Applications Gallium Nitride GaN Powder :
Since 1990 GaN has become a common light-emitting device (LED). Gallium nitride emits blue light which indicates it is a semiconductor with a direct III/V band gap. Gallium Nitride Semiconductor This is a great choice for transistors capable of working at high temperatures. Blu-ray disk reading. It is also used for lasers, radio frequency components and semiconductor power devices. Gallium nitride is expected to be used in sensor technology in the near future.
1. GaN is also used in smaller, full-color panels for trains and buses. GaN-based leds are more efficient, and offer a new option for blue and emerald LEDs.
2. The use of gallium nitride in semiconductors is widespread, including electric vehicles and photovoltaics.
3. The 5G radiofrequency uses gallium nitride. Gallium nitride will gradually replace the silicon-based materials in the 5G field due to the increased demands for radio frequency energy and power consumption.
4. GaN can be used for fast charging mobile phones. Gallium nitride charger Use Gan technology Its high-efficiency, compact size, and large power are key characteristics to the development of super-fast charger technology.

Gallium Nitride GaN powder - Packing & Shipping
The packaging we use depends on the amount of gadolinium nitride (GaN) powder.
Powder packaging of gallium nitride, GaN: Depending on your needs, vacuum packaging can be 100g,500g or 1kg per bag, 25kg per barrel, or at your request.
Shipment of GaN powder, also known as gallium nitride: Once payment has been received, goods can be shipped by sea, air or express as soon as practicable.


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Gallium Nitride Properties
Alternative Names	gallium nitride powder, GaN, GaN powder, gallium mononitride
CAS Number	25617-97-4
Compound Formula	GaN
Molecular Mass	83.73
Appearance	Light Yellow Powder
Melting Point	1700 degC
Boiling Point	N/A
Density	6.1 g/cm3
Solubility In H2O	N/A
Exact Value	82.9287
Monoisotopic Mash	82.9287
Aluminum Nitride Health & Safety Information
Sign Word	Warning
Hazard Statements	H317
Hazard Codes	N/A
Risk Codes	N/A
Safety Declarations	22-24/25
RTECS Number	LW9640000
Transport Information	N/A
WGK Germany	3

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