GaN is a semiconductor material of third-generation with a large forbidden-band width. It has superior properties compared to first-generation Si, and second-generation GaAs.
GaN devices, due to the large band gaps and high thermal conductivity of GaN, can operate above 200 degC temperatures, allowing them to carry a higher energy density, and a higher level of reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, higher amplifying gain, higher energy efficiency and smaller size. These characteristics are consistent with "tonality", the standard of the semiconductor industry.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices are more powerful than processes with high frequency, such as indium phosphide and gallium arsenide. GaN also has better frequency characteristics than power processes, such as LDCMOS or silicon carbide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

GaN can achieve higher power density than silicon. GaN has a higher energy density. GaN's small size is an advantage when it comes to achieving a particular power level. Smaller devices can reduce device capacitance, allowing for the design of systems with higher bandwidth. Power Amplifiers (PA) are a critical component of the RF Circuit.

Current applications of power amplifiers consist mainly of a gallium-arsenide power amplifier and a complementary metallic oxide semiconductor power amplifier (CMOSPA), where GaAs is the mainstay. However, with the advent 5G, GaAs devices will no longer be able to achieve high integration levels at such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of the holiday season. 5G is said to be 100 to 1000 times faster than 4G, and will reach Gigabits per second.

As well as the increase in base station density and number, there will be a large increase in RF devices. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is currently in this stage, will also be costing more to civilians because of the increased demand for silicon-based devices.

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